We present a domain decomposition framework for a multiscale model of charge transport in semiconductor structures with heterojunctions. Heterojunction problems are modeled by a coupled nonlinear system of partial differential equations posed in subdomains corresponding to distinct semiconductor materials. The heterojunction region is approximated as an idealized abrupt interface and the primary variables are related across the heterojunction interface by a set of transmission conditions comprised of a jump discontinuity in the electrostatic potential and unusual Robin-like conditions for carrier densities.
In the domain decomposition framework equations posed on the interface are developed whose solutions ensure the solution of independent boundary value problems in subdomains are equivalent to the problems with transmission conditions. This allows the use of single domain simulators, as well as facilitates the well-posedness analysis of the problem as that of an elliptic system.
In this setting we present well-posedness analysis as well as novel iterative substructuring algorithms. We review convergence analysis for the algorithms and present simulations of various semiconductor structures with heterojunctions.