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Event Type:

Applied Mathematics and Computation Seminar

Date/Time:

Friday, June 7, 2013 - 05:30

Location:

GLK 104

Abstract:

The Drift-Diffusion system is a coupled nonlinear system of

partial differential equations modelling electron transport in a

semiconductor material. This system consists of a Poisson equation for

electrostatic potential and two advection-diffusion equations for electron

and hole densities. A heterojunction refers to an interface between two

regions of distinct semiconductor materials. In the heterojunction model,

the potential exhibits a (known) jump discontinuity across the interface and

the current equations are modeled by an unusual Robin-like internal

boundary condition across the interface. We present domain decomposition

techniques for the numerical solution of the Drift-Diffusion model with

heterojunction.