Event Detail

Event Type: 
Applied Mathematics and Computation Seminar
Date/Time: 
Friday, June 7, 2013 - 05:30
Location: 
GLK 104
Abstract: 

The Drift-Diffusion system is a coupled nonlinear system of
partial differential equations modelling electron transport in a
semiconductor material. This system consists of a Poisson equation for
electrostatic potential and two advection-diffusion equations for electron
and hole densities. A heterojunction refers to an interface between two
regions of distinct semiconductor materials. In the heterojunction model,
the potential exhibits a (known) jump discontinuity across the interface and
the current equations are modeled by an unusual Robin-like internal
boundary condition across the interface. We present domain decomposition
techniques for the numerical solution of the Drift-Diffusion model with
heterojunction.